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IXFK26N100P

MOSFET 26 Amps 1000V

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SeekIC No. : 00153970 Detail

IXFK26N100P: MOSFET 26 Amps 1000V

IXFK26N100P Data Sheet

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Part Number:
IXFK26N100P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.39 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-264
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 0.39 Ohms


Parameters:

Technical/Catalog InformationIXFK26N100P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs390 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 11900pF @ 25V
Power - Max780W
PackagingTube
Gate Charge (Qg) @ Vgs197nC @ 10V
Package / CaseTO-264
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK26N100P
IXFK26N100P



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