IXFK24N80P Selling Leads, Price trend , Ixys, IXFK24N80P DataSheet download, circuit diagram from SeekIC.com

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IXFK24N80P: MOSFET 24 Amps 800V 0.4 Rds

IXFK24N80P Data Sheet

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Part Number:: IXFK24N80P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	24 A
Resistance Drain-Source RDS (on) :	0.4 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-264	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 24 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.4 Ohms
Package / Case : TO-264

Parameters:

Technical/Catalog Information	IXFK24N80P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	24A
Rds On (Max) @ Id, Vgs	400 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	7200pF @ 25V
Power - Max	650W
Packaging	Tube
Gate Charge (Qg) @ Vgs	105nC @ 10V
Package / Case	TO-264AA
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFK24N80P IXFK24N80P

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IXFK24N80P

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