Features: ·Double metal process for low gate resistance·International standard packages·Epoxy meet UL 94 V-0, flammability classification·Avalanche energy and current rated·Fast intrinsic RectifierApplication·Easy to mount·Space savings·High power densitySpecifications Symbol Test Conditions...
IXFK24N120Q2: Features: ·Double metal process for low gate resistance·International standard packages·Epoxy meet UL 94 V-0, flammability classification·Avalanche energy and current rated·Fast intrinsic RectifierA...
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Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flamm...
Symbol | Test Conditions | Maximum | Ratings |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C.RGS=1M |
1200 1200 |
V V |
VGS VGSM |
Continuous Transient |
±30 ±40 |
V V |
ID25 IDM IAR |
TC = 25°C TC = 25°C pulse width limited by TJM TC = 25°C |
24 96 12 |
A A A A |
EAR EAS |
TC = 25°C TC = 25°C |
30 4.0 |
0mJ mJ |
dv/dt | IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2 |
20 | V/ns |
PD | TC = 25°C | 830 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | °C |
Md |
Mounting torque TO-264 |
0.9/6 |
Nm/lb.in. Nm/lb.in. |
Weight | PLUS-247 TO-264 |
6 10 |
g g g |