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IXFK24N100

MOSFET 1KV 24A

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SeekIC No. : 00150953 Detail

IXFK24N100: MOSFET 1KV 24A

IXFK24N100 Data Sheet

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Part Number:
IXFK24N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.39 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 24 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 0.39 Ohms
Package / Case : TO-264AA


Features:

· International standard packages
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
- easy to drive and to protect
· Fast intrinsic rectifier


Application

· DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· AC motor control
· Temperature and lighting controls


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25 to 150
TJ = 25 to 150; RGS = 1 M
1000
1000
V
V
VGS
VGSM		 Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR		 TC = 25
TC = 25, Note 1
TC = 25
24
96
24
A
A
A
EAR
EAS		 TC = 25
TC = 25
60
3
mJ
J
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150, RG = 2
5
V/ns
PD TC = 25°C
560
W
TJ
TJM
Tstg
TL		 1.6 mm (0.063 in.) from case for 10 s
-55 ... +150
150
-55 ... +150
300



Md Mounting torque TO-264
Nm/lb.in.
Weight PLUS 247
TO-264
6 g
10 g



Parameters:

Technical/Catalog InformationIXFK24N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C24A
Rds On (Max) @ Id, Vgs390 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 8700pF @ 25V
Power - Max560W
PackagingTube
Gate Charge (Qg) @ Vgs267nC @ 10V
Package / CaseTO-264
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK24N100
IXFK24N100



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