Power Driver ICs GigaMOS Trench T2 HiperFET PWR MOSFET
IXFK240N15T2: Power Driver ICs GigaMOS Trench T2 HiperFET PWR MOSFET
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Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flamm...
Product : | MOSFET Gate Drivers | Type : | GigaMOS Trench T2 HiperFet | ||
Rise Time : | 125 ns | Fall Time : | 145 ns | ||
Supply Current : | 120 A | Maximum Power Dissipation : | 1250 W | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-264 | Packaging : | Tube |