IXFK21N100Q Selling Leads, Price trend , Ixys, IXFK21N100Q DataSheet download, circuit diagram from SeekIC.com

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IXFK21N100Q: MOSFET 21 Amps 1000V 0.5 Rds

IXFK21N100Q Data Sheet

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Part Number:: IXFK21N100Q
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/20

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1000 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	21 A
Resistance Drain-Source RDS (on) :	0.5 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-264AA	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 21 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 0.5 Ohms
Package / Case : TO-264AA

Features:

• IXYS advanced low Q_g process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low R_{DS (on)}
• Rated for unclamped Inductive load switching (UIS) rated
• Molding epoxies meet UL 94 V-0 flammability classification

Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls

Parameters:

Technical/Catalog Information	IXFK21N100Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	500 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	6900pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	TO-264AA
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFK21N100Q IXFK21N100Q

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IXFK21N100Q

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