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IXFK21N100F

MOSFET

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SeekIC No. : 00164374 Detail

IXFK21N100F: MOSFET

IXFK21N100F Data Sheet

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Part Number:
IXFK21N100F
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 21 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 0.5 Ohms
Package / Case : TO-264AA


Features:

 RF capable MOSFETs
 Double metal process for low gate resistance
 Unclamped Inductive Switching (UIS) rated
 Low package inductance
   - easy to drive and to protect
 Fast intrinsic rectifier


Application

 DC-DC converters
 Switched-mode and resonant-mode power supplies, >500kHz switching
 DC choppers
 13.5 MHz industrial applications
 Pulse generation
Laser drivers
 RF amplifiers


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS= 1 M
1000
1000
V
V
VGS
VGSM		 Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
21
84
21
A
A
A

EAR
EAS
TC = 25°C
TC = 25°C
60
2.5

mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
10
V/ns
PD TC = 25°C
500
W

TJ
TJM
Tstg
-55 ... +150
             150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s
300

°C

Md
Mounting torque       TO-264
0.4/6
Nm/lb.in.
Weight
PLUS 247
TO-264
5
10
g
g



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