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IXFK180N10

MOSFET 100V 180A

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SeekIC No. : 00151476 Detail

IXFK180N10: MOSFET 100V 180A

IXFK180N10 Data Sheet

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Part Number:
IXFK180N10
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 180 A
Resistance Drain-Source RDS (on) : 0.008 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 180 A
Resistance Drain-Source RDS (on) : 0.008 Ohms
Package / Case : TO-264AA


Features:

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25 to 150
TJ = 25 to 150; RGS = 1M
-100
-100
V
V
VGS
VGSM		 Continuous
Transient
±20
±30
V
V
ID25
ID(RMS)
IDM
IAR
E		 TC = 2 (MOSFET chip capability)
External lead (current limit)
TC = 25, Note 1
TC = 25
180
76
720
180
A
A
A
A
EAR
EAS		 TC = 25
TC = 25
30
mJ
J
dv/dt IS IDM, di/dt 100 A/s, VDDVDSS
T 150, R = 2
V/ns
PD TC = 25
180
W
TJ
TJM
Tstg
TL		 1.6 mm (0.063 in.) from case for 10 s
55 ... +150
          150
55 ... +150
           300



Md Mounting torque
1.13/10
Nm/lb.in
Weight  
6
g



Parameters:

Technical/Catalog InformationIXFK180N10
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C180A
Rds On (Max) @ Id, Vgs8 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 10900pF @ 25V
Power - Max560W
PackagingTube
Gate Charge (Qg) @ Vgs390nC @ 10V
Package / CaseTO-264
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK180N10
IXFK180N10



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