MOSFET 170 Amps 200V 0.014 Rds
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Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flamm...
Packaging : | Tube |
Technical/Catalog Information | IXFK170N20P |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 170A |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 11400pF @ 25V |
Power - Max | 1250W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 185nC @ 10V |
Package / Case | TO-264 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFK170N20P IXFK170N20P |