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IXFK170N10

MOSFET 170 Amps 100V

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SeekIC No. : 00159239 Detail

IXFK170N10: MOSFET 170 Amps 100V

IXFK170N10 Data Sheet

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Part Number:
IXFK170N10
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 170 A
Resistance Drain-Source RDS (on) : 0.01 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 170 A
Resistance Drain-Source RDS (on) : 0.01 Ohms
Package / Case : TO-264AA


Features:

·International standard packages
·Encapsulating epoxy meets UL 94 V-0, flammability classification
·miniBLOC with Aluminium nitride isolation
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
·Fast intrinsic Rectifier


Application

·DC-DC converters
·Synchronous rectification
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·Temperature and lighting controls
·Low voltage relays


Specifications

Symbol Test Conditions IXFK
170N10		 IXFN
170N10		 Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C		 100
100		 100
100		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 ±20
±30		 V
V
ID25
ID25
IDM
IAR
 TC = 25°C
TC = 25°C
TC = 25°C
TC = 25°C
 170
76
680
170		 170
NA
680
170		 A
A
A


EAR
TC = 25°C 60 60
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2		 5 5 V/ns
PD TC = 25°C 560 600 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s		 N/A
N/A		 2500
3000		 V~
V~
Md
 Mounting torque
Terminal connection torque
 0.9/6
N/A
 1.5/13
1.5/13		 Nm/lb.in.
Nm/lb.in.
Weight   10 30 g



Parameters:

Technical/Catalog InformationIXFK170N10
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C170A
Rds On (Max) @ Id, Vgs10 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 10300pF @ 25V
Power - Max560W
PackagingTube
Gate Charge (Qg) @ Vgs515nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK170N10
IXFK170N10



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