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IXFK15N100Q

MOSFET 15 Amps 1000V 0.725 Rds

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SeekIC No. : 00154198 Detail

IXFK15N100Q: MOSFET 15 Amps 1000V 0.725 Rds

IXFK15N100Q Data Sheet

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Part Number:
IXFK15N100Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 15 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 0.7 Ohms
Package / Case : TO-264AA


Features:

·IXYS advanced low Qg process
·International standard packages
·Epoxy meet UL 94 V-0, flammability classification
·Low RDS (on) low Qg
·Avalanche energy and current rated
·Fast intrinsic rectifier


Application

·Easy to mount
·Space savings
·High power density



Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C RGS=1M		 1000
1000		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C
TC = 25°C pulse width limited by TJM
TC = 25°C

15
60
15		 A
A
A
A


EAR
EAS
 TC = 25°C
 45
1.5
 0mJ
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2		 5 V/ns
PD TC = 25°C 360 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
 Mounting torque TO-247
TO-264
 1.13/10
0.9/6
 Nm/lb.in.
Nm/lb.in.
Weight TO-247
TO-268
TO-264		 6
4
10		 g
g
g



Parameters:

Technical/Catalog InformationIXFK15N100Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs700 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4500pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK15N100Q
IXFK15N100Q



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