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IXFK110N07

MOSFET 70V 110A

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SeekIC No. : 00159087 Detail

IXFK110N07: MOSFET 70V 110A

IXFK110N07 Data Sheet

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Part Number:
IXFK110N07
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 70 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 0.006 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 0.006 Ohms
Drain-Source Breakdown Voltage : 70 V
Package / Case : TO-264AA


Features:

• International standard packages
• JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25 to 150
TJ = 25 to 150; RGS = 1 M		 N07 70
N06 60
N07 70
N06 60		 V
V
V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30		 V
V
ID25
ID130
IDM
IAR		 TC = 25, die capability
TC = 130, limited by external leads
TC = 25, pulse width limited by TJM
TC = 25		 110
76
600
100		 A
A
A
A
EAR
EAS		 TC = 25
TC = 25		 30
2		 mJ
J
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150, RG = 2		 5 V/ns
PD TC = 25 500 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150

TL 1.6 mm (0.063 in) from case for 10 s 300
Md Mounting torque
Terminal connection torque		 0.9/6
-		 Nm/lb.in.
Nm/lb.in.
Weight   10 g



Parameters:

Technical/Catalog InformationIXFK110N07
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)70V
Current - Continuous Drain (Id) @ 25° C110A
Rds On (Max) @ Id, Vgs6 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 9000pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs480nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK110N07
IXFK110N07



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