IXFK110N06 Selling Leads, Price trend, IXFK110N06 DataSheet download, circuit diagram from SeekIC.com

Features: • International standard packages• JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductive Switching (UIS) rated• Low package inductance• Fast i...

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SeekIC No. : 004381532 Detail

IXFK110N06: Features: • International standard packages• JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell st...

IXFK110N06 Data Sheet

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Part Number:: IXFK110N06
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/20

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Recent History
What is this?

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Product Details

Description

Features:

• International standard packages
• JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier

Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays

Specifications

Symbol	Test Conditions	Maximum	Ratings
V_DSS V_DGR	T_J= 25 to 150 T_J= 25 to 150; RGS = 1 M	N07 70 N06 60 N07 70 N06 60	V V V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_D130I_DM I_AR	T_C= 25, die capability T_C= 130, limited by external leads T_C = 25, pulse width limited by T_JMT_C = 25	110 76 600 100	A A A A
E_ARE_AS	T_C= 25 T_C = 25	30 2	mJ J
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS, T_J 150, R_G = 2	5	V/ns
P_D	T_C = 25	500	W
T_J T_JMT_stg		-55 ... +150 150 -55 ... +150
T_L	1.6 mm (0.063 in) from case for 10 s	300
M_d	Mounting torque Terminal connection torque	0.9/6 -	Nm/lb.in. Nm/lb.in.
Weight		10	g

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IXFK110N06

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