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IXFK100N10

MOSFET 100 Amps 100V 0.012 Ohm Rds

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SeekIC No. : 00159187 Detail

IXFK100N10: MOSFET 100 Amps 100V 0.012 Ohm Rds

IXFK100N10 Data Sheet

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Part Number:
IXFK100N10
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.012 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.012 Ohms
Package / Case : TO-264AA


Features:

· International standard packages
· JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification
· miniBLOC with Aluminium nitride isolation
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
· Fast intrinsic Rectifier


Application

· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· Temperature and lighting controls
· Low voltage relays


Specifications

Symbol Test Conditions IXFK IXFN Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M		 100
100		 100
100		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
 100
76
560
75		 150
-
560
75		 A
A
A
A


EAR
EAS

 TC = 25°C
TC = 25°C		 30 30

mJ

dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2 		5 5 V/ns
PD TC = 25°C 500 520 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS t = 1 min
IISOL1 mA t = 1 s		 -
-		 2500
3000		 V~
V~
Md
 Mounting torque
Terminal connection torque
 0.9/6
-		 1.5/13
1.5/13
 Nm/lb.in.
Nm/lb.in.
Weight   10 30 g




Parameters:

Technical/Catalog InformationIXFK100N10
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs12 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 9000pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs360nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK100N10
IXFK100N10



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