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ITAxxU1

Features: ` High surge capability Transil array: IPP = 40 A (8/20s)` Peak pulse power : 300 W (8/20s)` Up to 6 bidirectional Transil functions` Low clamping factor (VCL / VBR) at high current level` Low leakage current` ESD protection up to 15kVApplication· Data transmission lines protection...

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ITAxxU1: Features: ` High surge capability Transil array: IPP = 40 A (8/20s)` Peak pulse power : 300 W (8/20s)` Up to 6 bidirectional Transil functions` Low clamping factor (VCL / VBR) at high current le...

ITAxxU1 Data Sheet

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Part Number:
ITAxxU1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/28

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Product Details

Description



Features:

` High surge capability Transil array:
   IPP = 40 A (8/20s)
` Peak pulse power : 300 W (8/20s)
` Up to 6 bidirectional Transil functions
` Low clamping factor (VCL / VBR) at high current level
` Low leakage current
` ESD protection up to 15kV


Application

· Data transmission lines protection, such as :
   ·  Unipolar signal up to 5.5 V
   ·  Bipolar signal in the ± 2.5 V range


Pinout

Connection Diagram


Specifications

Symbol Parameter
Value
Unit
PPP Peak pulse power (8/20s) (see note 1) Tj initial = Tamb
300
W
IPP Peak pulse current (8/20s) (see note 1) Tj initial = Tamb
40
A
I2t Wire I2t value (see note 1)
0.6
A2S
Tj Maximum operating junction temperature
125
Tstg Storage temperature range
-55 to +150
TL Maximum lead temperature for soldering during 10 s at 5mm for case
260

Note 1: For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit caused by the wire melting.


Description

Transil diode arrays ITAxxU1 provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices ITAxxU1 such as MOS Technology and low voltage supplied IC's.

The ITA series ITAxxU1 allies high surge capability against energetic pulses with high voltage performance against ESD.




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