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ITAxxB3

Features: High surge capability Transil array: IPP = 40 A (8/20 s) Peak pulse power: 300 W (8/20 s) Separated Input - Output Up to 9 bidirectional Transil functions Low clamping factor (VCL/VBR) at high current level Low leakage current ESD protection up to 15 kVApplicationDifferential data trans...

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ITAxxB3: Features: High surge capability Transil array: IPP = 40 A (8/20 s) Peak pulse power: 300 W (8/20 s) Separated Input - Output Up to 9 bidirectional Transil functions Low clamping factor (VCL/VBR) at...

ITAxxB3 Data Sheet

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Part Number:
ITAxxB3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/10

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Product Details

Description



Features:

High surge capability Transil array: IPP = 40 A (8/20 s)
Peak pulse power: 300 W (8/20 s)
Separated Input - Output
Up to 9 bidirectional Transil functions
Low clamping factor (VCL/VBR) at high current level
Low leakage current
ESD protection up to 15 kV


Application

Differential data transmission lines protection, such as :
RS-232
RS-423
RS-422
RS-485


Pinout

Connection Diagram


Specifications

Symbol
 Parameter
Value
Unit
PPP
 Peak pulse power (8/20 s)(1) Tj initial = Tamb
300
W
IPP
 Peak pulse current (8/20 s)(1) Tj initial = Tamb
40
A
I2t
 Wire I2t value(1)
0.6
A2s
Tj
 Maximum operating junction temperature
125
Tstg
 Storage temperature range
-55 to +150
TL
 Maximum lead temperature for soldering during 10 s
260



Description

Transil diode arrays ITAxxB3 provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS technology and low voltage supplied IC's.

The ITA series ITAxxB3 combines high surge capability against energetic pulses with high voltage performance against ESD.

The separated input/output configuration of the device ITAxxB3 ensures improved protection against very fast transient overvoltage like ESD by elimination of the spikes induced by parasitic inductances created by external wiring.




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