IRLW640A Selling Leads, Price trend, IRLW640A DataSheet download, circuit diagram from SeekIC.com

Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area150°C Operating Temperature Lower Leakage Current: 10mA (Max.) @ VDS = 200VLower RDS(ON): 0.145W (Typ.)Specifications Symbol Characteristic Value ...

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SeekIC No. : 004378538 Detail

IRLW640A: Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area150°C Operating Temperature Lower Leakage Current: 10mA (...

IRLW640A Data Sheet

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Part Number:: IRLW640A
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/24

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US $.28 - .55 / Piece

MOSFET 100V N-Channel a-FET Logic Level

Product Details

Description

Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
150°C Operating Temperature
Lower Leakage Current: 10mA (Max.) @ V_DS= 200V
Lower R_DS(ON): 0.145W (Typ.)

Specifications

Symbol	Characteristic	Value	Units
V_DSS	Drain-to-Source Voltage	200	V
I_D	Continuous Drain Current (T_C=25°C)	18	A
I_D	Continuous Drain Current (T_C=100°C)	11.4	A
I_DM	Drain Current-Pulsed (1)	63	A
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulsed Avalanche Energy (2)	64	mJ
I_AR	Avalanche Current (1)	18	A
E_AR	Repetitive Avalanche Energy (1)	11	mJ
dv/dt	Peak Diode Recovery dv/dt (3)	5	V/ns
P_D	Total Power Dissipation (T_A=25°C)*	3.1	W
P_D	Total Power Dissipation (T_C=25°C) Linear Derating Factor	110 0.88	W W/°C
T_J , T_STG	Operating Junction and Storage Temperature Range	- 55 to +175	°C
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds	300	°C

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IRLW640A

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