MOSFET 100V N-Channel a-FET Logic Level
IRLW510ATM: MOSFET 100V N-Channel a-FET Logic Level
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Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Im...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 5.6 A | ||
Resistance Drain-Source RDS (on) : | 0.44 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Reel |
Technical/Catalog Information | IRLW510ATM |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 5.6A |
Rds On (Max) @ Id, Vgs | 440 mOhm @ 2.8A, 5V |
Input Capacitance (Ciss) @ Vds | 235pF @ 25V |
Power - Max | 3.8W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 8nC @ 5V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLW510ATM IRLW510ATM |