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IRLW610ATM

MOSFET 200V N-Channel a-FET Logic Level

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SeekIC No. : 00151588 Detail

IRLW610ATM: MOSFET 200V N-Channel a-FET Logic Level

IRLW610ATM Data Sheet

floor Price/Ceiling Price

US $ .29~.58 / Piece | Get Latest Price
Part Number:
IRLW610ATM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.58
  • $.49
  • $.36
  • $.29
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.3 A
Resistance Drain-Source RDS (on) : 1.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Package / Case : TO-263
Continuous Drain Current : 3.3 A


Parameters:

Technical/Catalog InformationIRLW610ATM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C3.3A
Rds On (Max) @ Id, Vgs1.5 Ohm @ 1.65A, 5V
Input Capacitance (Ciss) @ Vds 240pF @ 25V
Power - Max3.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs9nC @ 5V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLW610ATM
IRLW610ATM



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