Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area`175 Operating Temperature` Lower Leakage Current : 10 A (Max.) @ VDS = 100V` Lower RDS(ON) : 0.176 (Typ.)Specifications Symbol Characteristi...
IRLW/I520A: Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area`175 Operating Temperature` Lower Leakage Current : ...
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Symbol |
Characteristic |
Value. |
Units |
VDSS |
Drain-to-Source Voltage |
100 |
V |
ID |
Continuous Drain Current (TC=25) |
9.2 |
A |
Continuous Drain Current (TC=100) |
6.5 | ||
IDM |
Drain Current-Pulsed |
32 |
A |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulsed Avalanche Energy |
112 |
mJ |
IAR |
Avalanche Current |
9.2 |
A |
EAR |
Repetitive Avalanche Energy |
4.9 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
6.5 |
V/ns |
PD |
Total Power Dissipation (TA=25) * |
3.8 |
W |
Total Power Dissipation (TC=25) Linear Derating Factor |
49 0.33 |
W W/ | |
TJ , TSTG |
Operating Junction and Storage Temperature Range |
55 to +175 |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |