MOSFET 200V N-Channel a-FET Logic Level
IRLW630ATM: MOSFET 200V N-Channel a-FET Logic Level
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 9 A | ||
Resistance Drain-Source RDS (on) : | 0.4 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Reel |
Technical/Catalog Information | IRLW630ATM |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 9A |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 5V |
Input Capacitance (Ciss) @ Vds | 755pF @ 25V |
Power - Max | 3.1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 27nC @ 5V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLW630ATM IRLW630ATM |