MOSFET 100V N-Channel a-FET Logic Level
IRLW520ATM: MOSFET 100V N-Channel a-FET Logic Level
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Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Im...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 9.2 A | ||
Resistance Drain-Source RDS (on) : | 0.22 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Reel |