IRLR8503TRPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 20nC @ 5V
Packaging: Cut Tape (CT)
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 44A
Power - Max: 62W
Input Capacitance (Ciss) @ Vds: 1650pF @ 25V
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V


Parameters:

Technical/Catalog Information	IRLR8503TRPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	44A
Rds On (Max) @ Id, Vgs	16 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1650pF @ 25V
Power - Max	62W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	20nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR8503TRPBF IRLR8503TRPBF IRLR8503PBFTR ND IRLR8503PBFTRND IRLR8503PBFTR