Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (IRLU3410)·Advanced Process Technology·Fast Switching·Fully Avalanche RatedSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A ID @ TC = 100°C ...
IRLR/U3410: Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (IRLU3410)·Advanced Process Technology·Fast Switching·Fully Avalanche RatedSpecifications Para...
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Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 17 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 12 | |
IDM | Pulsed Drain Current | 60 | |
PD @TC = 25°C | Power Dissipation | 79 | W |
Linear Derating Factor |
0.53 |
W/°C | |
VGS | Diode Maximum Forward Current | ± 16 | V |
EAS | Single Pulse Avalanche Energy | 150 | mJ |
IAR | Avalanche Current | 9.0 | A |
EAR | Repetitive Avalanche Energy | 7.9 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Fifth Generation HEXFETs from International Rectifier IRLR/U3410 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLR/U3410 design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK IRLR/U3410 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.