MOSFET N-Chan 60V 2.7 Amp
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 7.7 A | ||
Resistance Drain-Source RDS (on) : | 0.2 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |