IRLR8113

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Packaging: Tube
Gate Charge (Qg) @ Vgs: 32nC @ 4.5V
Power - Max: 89W
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 94A
Input Capacitance (Ciss) @ Vds: 2920pF @ 15V


Application

High Frequency Synchronous Buck Converters for Computer Processor Power
High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	± 20
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	94
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	67	A
IDM	Pulsed Drain Current	380
PD @TC = 25°C	Maximum Power Dissipation	89	W
PD @TC = 100°C	Maximum Power Dissipation	44
	Linear Derating Factor	0.59	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw	10 lbfin (1.1 Nm)