IRLR8103VPBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 10.5 mOhms
Continuous Drain Current : 89 A


Features:

• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current applications
• 100% RG Tested
• Lead-Free


Specifications

Parameter		Symbol	IRLR8103V	Unit
Drain-Source Voltage		VDSS	30	V
Gate-Source Voltage		VGSS	±20	V
Continuous Drain or Source Current	TC = 25	ID	91	A
(VGS > 10V)	TC= 90		63
Pulsed Drain Current		IDM	363
Power Dissipation	TC = 25	PD	115	W
	TC = 90		60
Operating Junction and Storage Temperature Range		TJ, TSTG	-55 to +150
Continuous Source Current (Body Diode)		IS	91	A
Pulsed Source Current		ISM	363

Description

This new device employs advanced HEXFET Power MOSFET IRLR8103VPbF technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DCDC converters that power the latest generation of microprocessors.

The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103V offers an extremely low combination of Q_sw & R_DS(on) for reduced losses in both control and synchronous FET applications.

The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.

Parameters:

Technical/Catalog Information	IRLR8103VPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	91A
Rds On (Max) @ Id, Vgs	9 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	2672pF @ 16V
Power - Max	115W
Packaging	Tube
Gate Charge (Qg) @ Vgs	27nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR8103VPBF IRLR8103VPBF