Features: • N-Channel Application-Specific MOSFETs• Ideal for CPU Core DC-DC Converters• Low Conduction Losses• Low Switching Losses• Minimizes Parallel MOSFETs for high current applications• 100% RG TestedSpecifications Parameter Symbol IRLR8103V ...
IRLR8103V: Features: • N-Channel Application-Specific MOSFETs• Ideal for CPU Core DC-DC Converters• Low Conduction Losses• Low Switching Losses• Minimizes Parallel MOSFETs for hig...
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Parameter |
Symbol |
IRLR8103V |
Unit | |
Drain-Source Voltage |
VDS |
30 |
V | |
Gate-Source Voltage |
VGS |
±20 | ||
Continuous Drain or Source Current |
TC = 25°C |
ID |
91 |
A |
(VGS > 10V) |
TC= 90°C |
63 | ||
Pulsed Drain Current |
IDM |
363 | ||
Pulsed Drain Current |
TC = 25°C |
PD |
115 |
W |
TC = 90°C |
60 | |||
Junction & Storage Temperature Range |
TJ , TSTG |
-55 to 150 |
°C | |
Continuous Source Current (Body Diode) |
IS |
91 |
A | |
Pulsed Source Current |
ISM |
363 |
This new device IRLR8103V employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.
The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103V offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications.
The package of IRLR8103V is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.