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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 65 A |
Resistance Drain-Source RDS (on) : | 12.5 mOhms | Mounting Style : | SMD/SMT |
Package / Case : | DPAK |
Parameter |
Max. |
Units | |
VDS | Drain-to-Source Voltage |
30 |
V |
VGS | Gate-to-Source Voltage |
±20 | |
ID@ TC = 25 |
Continuous Drain Current, VGS@ 10V |
65 |
A |
ID@TC = 100 |
Continuous Drain Current, VGS@10V |
47 | |
IDM | Pulsed Drain Current |
260 | |
PD @TC = 25 |
Maximum Power Dissipation |
75 |
W |
PD@TC = 100 |
Maximum Power Dissipation |
37.5 | |
Linear Derating Factor |
0.50 |
W/ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
0.50 -55 to + 175 |
|
Technical/Catalog Information | IRLR7821CPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 65A |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 1030pF @ 15V |
Power - Max | 75W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 14nC @ 4.5V |
Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLR7821CPBF IRLR7821CPBF |