IRLR7811WPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V
Packaging: Tube
Gate Charge (Qg) @ Vgs: 31nC @ 4.5V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 64A
Power - Max: 71W
Input Capacitance (Ciss) @ Vds: 2260pF @ 15V


Application

· High Frequency Synchronous Buck Converters for Computer Processor Power
· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current VGS@ 10V	64	A
ID @ TC = 100	Continuous Drain Current, VGS@10V	45
IDM	Pulsed Drain Current	260
PD @ TC = 25	Power Dissipation	71
PD @ TA = 100	Power Dissipation*	1.5	W
	Linear Derating Factor	0.48	W/
VGS	Gate-to-Source Voltage	±12	V
TJ	Operating Junction and	-55 to + 175
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)