FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V
Packaging: Tube
Gate Charge (Qg) @ Vgs: 31nC @ 4.5V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 64A
Power - Max: 71W
Input Capacitance (Ciss) @ Vds: 2260pF @ 15V
Application· High Frequency Synchronous Buck Converters for Computer Processor Power
· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
· Lead-Free
Specifications
| |
Parameter |
Max. |
Units |
| ID @ TC=25 |
Continuous Drain Current,VGS @ 10V |
64 |
A |
| ID @ TC=100 |
Continuous Drain Current,VGS @ 10V |
45 |
| IDM |
Pulsed Drain Current |
260 |
| PD @ TC = 25 |
Power Dissipation |
71 |
|
| PD @ TA = 100 |
Power Dissipation* |
1.5 |
W |
| |
Linear Derating Factor |
0.48 |
W/ |
| VGS |
Gate-to-Source Voltage |
±12 |
V |
| TJ |
Operating Junction |
-55 to +150 |
|
| TSTG |
Storage Temperature Range |
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
Notes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
Starting TJ = 25, L =10.6mH Peak IL = -6.7A, VGS = -12V
Pulse width 400µs; duty cycle 2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A.
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameters: | Technical/Catalog Information | IRLR7811WCPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 25A |
| Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 2260pF @ 15V |
| Power - Max | 71W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 31nC @ 4.5V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLR7811WCPBF
IRLR7811WCPBF
|
IRLR7811WCPBF Data Sheet
