IRLR4343TRRPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 26A
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Power - Max: 79W
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds: 740pF @ 50V


Parameters:

Technical/Catalog Information	IRLR4343TRRPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	26A
Rds On (Max) @ Id, Vgs	50 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds	740pF @ 50V
Power - Max	79W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	42nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR4343TRRPBF IRLR4343TRRPBF