Features: Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V(Silicon limited) 61 A ID @ TC = 100°C Contin...
IRLR3915: Features: Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID...
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
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Parameter | Max. | Units |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V(Silicon limited) | 61 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V(See Fig.9) | 43 |
|
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package limited) | 30 | |
IDM | Pulsed Drain Current | 240 |
|
PD @TC = 25°C | C Power Dissipation | 120 | W |
|
Linear Derating Factor | 0.77 | W/°C |
VGS | Gate-to-Source Voltage | ±16 | V |
EAS | Single Pulse Avalanche Energy | 200 | mJ |
EAS (6 sigma) | Single Pulse Avalanche Energy Tested Value | 600 | |
IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
TJ TSTG |
Operating Junction and TSTG Storage Temperature Range |
-55 to + 150 | °C |
|
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
|
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLR3915 utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRLR3915 are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.