MOSFET
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 12 V | ||
Gate-Source Breakdown Voltage : | 12 V | Continuous Drain Current : | 84 A | ||
Resistance Drain-Source RDS (on) : | 8.5 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Symbol | Parameter |
Max. |
Units |
VDS | Drain-Source Voltage |
12 |
V |
VGS | Gate-to-Source Voltage |
± 12 |
V |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 4.5V |
84 |
A |
ID @ TA =100°C | Continuous Drain Current, VGS @ 4.5V |
60 | |
IDM | Pulsed Drain Current |
320 | |
PD @TC = 25°C | Maximum Power Dissipation |
88 |
W |
PD @TC = 100°C | Maximum Power Dissipation |
44 |
W |
Linear Derating Factor |
0.59 |
mW/ | |
TJ , TSTG | Junction and Storage Temperature Range |
-55 to + 175 |
Technical/Catalog Information | IRLR3802PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25° C | 84A |
Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 15A, 4.5V |
Input Capacitance (Ciss) @ Vds | 2490pF @ 6V |
Power - Max | 88W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 41nC @ 5V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLR3802PBF IRLR3802PBF |