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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 49 A | ||
Resistance Drain-Source RDS (on) : | 15.5 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Symbol | Parameter | Max. | Units |
Linear Derating Factor | 0.27 | W/ | |
VDS VGS |
Drain-to-Source Voltage Gate-to-Source Voltage |
20 ±20 |
V |
ID @ TC = 25 ID @ TC = 100 IDM |
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current |
49 35 200 |
A |
PD @ TC = 25 PD @ TC = 100 |
Maximum Power Dissipation Maximum Power Dissipation |
40 20 |
W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 ~ +175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
Technical/Catalog Information | IRLR3715ZPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 49A |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 810pF @ 10V |
Power - Max | 40W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 11nC @ 4.5V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLR3715ZPBF IRLR3715ZPBF |