MOSFET N-CH 20V 49A DPAK
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 20V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 49A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 15A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2.55V @ 250µA | Gate Charge (Qg) @ Vgs: | 11nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 810pF @ 10V | ||
Power - Max: | 40W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package: | D-Pak |
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Parameter |
Max. |
Units | |
VDSS | Drain-to-Source Voltage |
20 |
V |
VGS | Gate-to-Source Voltage |
±20 | |
ID@TC = 25 | Continuous Drain Current,VGS@10V |
49 |
A |
ID@TC = 25 | Continuous Drain Current,VGS@10V |
35 | |
IDM | Pulsed Drain Current |
200 | |
PD@TC = 25 | Maximum Power Dissipation |
40 |
W |
PD@TC = 100 | Maximum Power Dissipation |
20 | |
Linear Derating Factor |
0.27 |
W/ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |