IRLR3715Z

MOSFET N-CH 20V 49A DPAK

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SeekIC No. : 003432773 Detail

IRLR3715Z: MOSFET N-CH 20V 49A DPAK

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Part Number:
IRLR3715Z
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 49A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) @ Vgs: 11nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 810pF @ 10V
Power - Max: 40W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Gate Charge (Qg) @ Vgs: 11nC @ 4.5V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Packaging: Tube
Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
Power - Max: 40W
Input Capacitance (Ciss) @ Vds: 810pF @ 10V
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 49A


Application

· High Frequency Synchronous Buck Converters for Computer Processor Power
· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use




Specifications

 

Parameter

Max.

Units

VDSS Drain-to-Source Voltage

20

V

VGS Gate-to-Source Voltage

±20

ID@TC = 25 Continuous Drain Current,VGS@10V

49

A

ID@TC = 25 Continuous Drain Current,VGS@10V

35

IDM Pulsed Drain Current

200

PD@TC = 25 Maximum Power Dissipation

40

W

PD@TC = 100 Maximum Power Dissipation

20

  Linear Derating Factor

0.27

W/

TJ
TSTG
Operating Junction and
Storage Temperature Range

-55 to +175

  Soldering Temperature, for 10 seconds

300 (1.6mm from case)


Notes;
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting TJ = 25, L = 0.27mH, RG = 25Ω,IAS = 12A.
  Pulse width 400µs; duty cycle 2%.
  Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A.
  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.


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