FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Gate Charge (Qg) @ Vgs: 11nC @ 4.5V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Packaging: Tube
Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
Power - Max: 40W
Input Capacitance (Ciss) @ Vds: 810pF @ 10V
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 49A
Application· High Frequency Synchronous Buck Converters for Computer Processor Power
· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
Specifications
| |
Parameter |
Max. |
Units |
| VDSS |
Drain-to-Source Voltage |
20 |
V |
| VGS |
Gate-to-Source Voltage |
±20 |
| ID@TC = 25 |
Continuous Drain Current,VGS@10V
|
49 |
A |
| ID@TC = 25 |
Continuous Drain Current,VGS@10V
|
35 |
| IDM |
Pulsed Drain Current
|
200 |
| PD@TC = 25 |
Maximum Power Dissipation |
40 |
W |
| PD@TC = 100 |
Maximum Power Dissipation
|
20 |
| |
Linear Derating Factor
|
0.27 |
W/ |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to +175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
Notes;
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J = 25, L = 0.27mH, R
G = 25Ω,I
AS = 12A.
Pulse width 400µs; duty cycle 2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
IRLR3715Z Data Sheet
