IRLR3714

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 9.7nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 36A
Packaging: Tube
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 670pF @ 10V
Power - Max: 47W
Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V


Application

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
High Frequency Buck  Converters for Computer Processor Power


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-to-Source Voltage	± 20	V
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	36	A
ID @ TC = 70°C	Continuous Drain Current, VGS @ 10V	31
IDM	Pulsed Drain Current	140
PD @TC = 25°C	Maximum Power Dissipation	47	W
PD @TC = 70°C	Maximum Power Dissipation	33	W
	Linear Derating Factor	0.31	W/°C
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 175	°C