IRLR3705Z

MOSFET N-CH 55V 42A DPAK

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IRLR3705Z Picture
SeekIC No. : 003433533 Detail

IRLR3705Z: MOSFET N-CH 55V 42A DPAK

floor Price/Ceiling Price

US $ .98~.98 / Piece | Get Latest Price
Part Number:
IRLR3705Z
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~300
  • Unit Price
  • $.98
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 42A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 66nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2900pF @ 25V
Power - Max: 130W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Packaging: Tube
Gate Charge (Qg) @ Vgs: 66nC @ 5V
Power - Max: 130W
Input Capacitance (Ciss) @ Vds: 2900pF @ 25V
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 42A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V


Features:

· Logic Level
· Advanced Process Technology
· Ultra Low On-Resistance
· 175°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax



Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 89 A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 63 A
IDM Pulsed Drain Current 42 A
PD @ TC = 25°C Max. Power Dissipation 360 W
  Linear Derating Factor 130 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 110 mJ
IAR Avalanche Current 190 A
EAR Repetitive Avalanche Energy 0.5 mJ
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
TJ Operating Junction -55 to 175 oC
TSTG Storage Temperature Range See Fig.12a, 12b, 15, 16 oC
  Pckg. Mounting Surface Temp. 300(1.6mm from case ) oC
  Weight 0.98 (Typical) g



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLR3705Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRLR3705Z  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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