MOSFET
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | 16 V | Continuous Drain Current : | 99 A | ||
Resistance Drain-Source RDS (on) : | 8.3 mOhms | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Technical/Catalog Information | IRLR3636PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 50A |
Rds On (Max) @ Id, Vgs | 6.8 mohm @ 50A, 10V |
Input Capacitance (Ciss) @ Vds | 3779pF @ 50V |
Power - Max | 143W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 49nC @ 4.5V |
Package / Case | D²Pak, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLR3636PBF IRLR3636PBF |