IRLR3410PBF

MOSFET

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SeekIC No. : 00146689 Detail

IRLR3410PBF: MOSFET

floor Price/Ceiling Price

US $ .27~.76 / Piece | Get Latest Price
Part Number:
IRLR3410PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.76
  • $.38
  • $.32
  • $.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/31

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : 16 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 155 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 155 mOhms


Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 17 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 60
PD @TC = 25 Power Dissipation 79 W
  Linear Derating Factor 0.53 W/
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy 150 mJ
IAR Avalanche Current 9.0 A
EAR Repetitive Avalanche Energy 7.9 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ ,TSTG Operating Junction and Storage Temperature Range -55 to + 175  
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Description

Fifth Generation HEXFETs from International Rectifier IRLR3410PbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLR3410PbF design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK IRLR3410PbF  is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.




Parameters:

Technical/Catalog InformationIRLR3410PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs105 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 800pF @ 25V
Power - Max79W
PackagingBulk
Gate Charge (Qg) @ Vgs34nC @ 5V
Package / CaseDPak,SC-63,TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLR3410PBF
IRLR3410PBF



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