FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 35A
Input Capacitance (Ciss) @ Vds: 870pF @ 25V
Gate Charge (Qg) @ Vgs: 26nC @ 4.5V
Packaging: Tube
Manufacturer: International Rectifier
Power - Max: 68W
Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V
Features: Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR3303)
Straight Lead (IRLU3303)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
35 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
25 |
| IDM |
Pulsed Drain Current |
140 |
| PD @TC = 25°C |
Power Dissipation |
68 |
W |
| |
Linear Derating Factor |
0.45 |
W/°C |
| VGS |
Gate-to-Source Voltage |
± 16 |
V |
| EAS |
Single Pulse Avalanche Energy |
130 |
mJ |
| IAR |
Avalanche Current |
20 |
A |
| EAR |
Repetitive Avalanche Energy |
6.8 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ
TSTG |
Operating Junction and
Storage Temperature Range
|
-55 to + 175 |
°C |
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
DescriptionFifth Generation HEXFETs from International Rectifier IRLR3303 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLR3303 design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK IRLR3303 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
IRLR3303 Data Sheet
