IRLR3114ZPBF

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : DPAK
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Continuous Drain Current : 130 A
Resistance Drain-Source RDS (on) : 6.5 mOhms


Features:

Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
 Logic Level


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Silicon Limited)	130	A
ID @ TC =100	Continuous Drain Current, VGS @ 10V (Package Limited)	89
ID @ TC = 25	Continuous Drain Current,VGS @ 10V (Package Limited)	42
IDM	Pulsed Drain Current	500
PD @TC= 25	Power Dissipation	140	W
	Linear Derating Factor	0.95	W/
VGS	Gate-to-Source Voltage	±16	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	130	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	260
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Reflow Soldering Temperature, for 10 seconds	300
	Mounting Torque, 6-32 or M3 screw	10 lbf`in (1.1N`m)

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLR3114ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this IRLR3114ZPbF  design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRLR3114ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	42A
Rds On (Max) @ Id, Vgs	4.9 mOhm @ 42A, 10V
Input Capacitance (Ciss) @ Vds	3810pF @ 25V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 4.5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR3114ZPBF IRLR3114ZPBF