IRLR3103TRR

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 50nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 55A
Input Capacitance (Ciss) @ Vds: 1600pF @ 25V
Manufacturer: International Rectifier
Power - Max: 107W
Rds On (Max) @ Id, Vgs: 19 mOhm @ 33A, 10V


Parameters:

Technical/Catalog Information	IRLR3103TRR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	55A
Rds On (Max) @ Id, Vgs	19 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 25V
Power - Max	107W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	50nC @ 4.5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRLR3103TRR IRLR3103TRR