IRLR3103PBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Drain-Source Breakdown Voltage : 30 V
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Continuous Drain Current : 46 A
Resistance Drain-Source RDS (on) : 24 mOhms


Features:

· Logic-Level Gate Drive
· Ultra Low On-Resistance
· Surface Mount (IRLR3103)
· Straight Lead (IRLU3103)
· Advanced Process Technology
· Fast Switching
· Fully Avalanche Rated
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	55	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	39
IDM	Pulsed Drain Current	220
PD @TC = 25	Power Dissipation	107	W
	Linear Derating Factor	0.71	W/
VGS	Gate-to-Source Voltage	± 16	V
EAS	Single Pulse Avalanche Energy	240	mJ
IAR	Avalanche Current	34	A
EAR	Repetitive Avalanche Energy	11	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Fifth Generation HEXFETs from International Rectifier IRLR3103PbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLR3103PbF design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK IRLR3103PbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parameters:

Technical/Catalog Information	IRLR3103PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	55A
Rds On (Max) @ Id, Vgs	19 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 25V
Power - Max	107W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 4.5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR3103PBF IRLR3103PBF