IRLR3103

MOSFET N-CH 30V 55A DPAK

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SeekIC No. : 003431433 Detail

IRLR3103: MOSFET N-CH 30V 55A DPAK

floor Price/Ceiling Price

US $ .71~1.71 / Piece | Get Latest Price
Part Number:
IRLR3103
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~1000
  • Unit Price
  • $1.71
  • $1.1
  • $.85
  • $.71
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 55A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 19 mOhm @ 33A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 50nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1600pF @ 25V
Power - Max: 107W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 50nC @ 4.5V
Packaging: Tube
Current - Continuous Drain (Id) @ 25° C: 55A
Input Capacitance (Ciss) @ Vds: 1600pF @ 25V
Manufacturer: International Rectifier
Power - Max: 107W
Rds On (Max) @ Id, Vgs: 19 mOhm @ 33A, 10V


Features:

· Logic-Level Gate Drive
· Ultra Low On-Resistance
· Surface Mount (IRLR3103)
· Straight Lead (IRLU3103)
· Advanced Process Technology
· Fast Switching
· Fully Avalanche Rated



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 46 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 A
IDM Pulsed Drain Current 220 A
PD @TC = 25°C Power Dissipation 69 W
  Linear Derating Factor 0.56 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 240 mJ
IAR Avalanche Current 34 A
EAR Repetitive Avalanche Energy 6.9 mJ
dv/dt Peak Diode Recovery dv/dt 2.0 V/ns
TJ,TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case) °C



Description

Fifth Generation HEXFETs from International Rectifier utilize IRLR3103 advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLR3103 design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK IRLR3103 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.


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