MOSFET N-CH 30V 55A DPAK
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 30V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 55A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 33A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 1V @ 250µA | Gate Charge (Qg) @ Vgs: | 50nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1600pF @ 25V | ||
Power - Max: | 107W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package: | D-Pak |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 46 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 29 | A |
IDM | Pulsed Drain Current | 220 | A |
PD @TC = 25°C | Power Dissipation | 69 | W |
Linear Derating Factor | 0.56 | W/°C | |
VGS | Gate-to-Source Voltage | ±16 | V |
EAS | Single Pulse Avalanche Energy | 240 | mJ |
IAR | Avalanche Current | 34 | A |
EAR | Repetitive Avalanche Energy | 6.9 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 2.0 | V/ns |
TJ,TSTG | Operating Junction and Storage Temperature Range | -55 to + 150 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | °C |