MOSFET
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | 16 V | Continuous Drain Current : | 60 A | ||
Resistance Drain-Source RDS (on) : | 22.5 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Parameter |
Max. |
Units | |
ID @ TC = 25 |
Continuous Drain Current VGS @ 10V(Silicon Limited) |
60 |
A |
ID @ TC =100 |
Continuous Drain Current VGS @ 10V |
43 | |
ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V (Package Limited) |
42 | |
IDM |
Pulsed Drain Current |
240 | |
PD @ TC = 25 |
Max. Power Dissipation |
110 |
W |
Linear Derating actor |
0.72 |
W/ | |
VGS |
Gate-to-Source Voltage |
±16 |
V |
EAS (Thermally limited) |
Single Pulse Avalanche Energy |
57 |
mJ |
EAS (Tested ) |
Single Pulse Avalanche Energy Tested Value |
85 |
mJ |
IAR |
Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
EAR |
Repetitive Avalanche Energy |
mJ | |
TJ |
Operating Junction |
-55 to 175 |
|
TSTG |
Storage Temperature Range | ||
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting Torque, 6-32 or M3 screw | 10lb`in (1.1N`m) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLR2905ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRLR2905ZPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Technical/Catalog Information | IRLR2905ZPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 42A |
Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 36A, 10V |
Input Capacitance (Ciss) @ Vds | 1570pF @ 25V |
Power - Max | 110W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 35nC @ 5V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLR2905ZPBF IRLR2905ZPBF |