IRLR2905Z

MOSFET N-CH 55V 42A DPAK

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IRLR2905Z Picture
SeekIC No. : 003432115 Detail

IRLR2905Z: MOSFET N-CH 55V 42A DPAK

floor Price/Ceiling Price

US $ .87~.87 / Piece | Get Latest Price
Part Number:
IRLR2905Z
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~300
  • Unit Price
  • $.87
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/11

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 42A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 35nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1570pF @ 25V
Power - Max: 110W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Packaging: Tube
Drain to Source Voltage (Vdss): 55V
Gate Charge (Qg) @ Vgs: 35nC @ 5V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 42A
Power - Max: 110W
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V
Input Capacitance (Ciss) @ Vds: 1570pF @ 25V


Features:

Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax



Specifications

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @10V (Silicon Limited)
60
ID @ TC = 100°C Continuous Drain Current, VGS @10V
43
A
ID @ TC = 25°C Continuous Drain Current, VGS @10V (Silicon Limited)
42
IDM Pulsed Drain Current
240
PD @TC = 25°C Power Dissipation
110
W

Linear Derating Factor
0.72
W/°C
VGS Gate-to-Source Voltage
±16
V
EAS(Thermally limited) Single Pulse Avalanche Energy
57
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
85
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C

Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)




Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLR2905Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRLR2905Z combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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