IRLR2705

MOSFET N-CH 55V 28A DPAK

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IRLR2705 Picture
SeekIC No. : 003433594 Detail

IRLR2705: MOSFET N-CH 55V 28A DPAK

floor Price/Ceiling Price

Part Number:
IRLR2705
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 28A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 25nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 880pF @ 25V
Power - Max: 68W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Packaging: Tube
Current - Continuous Drain (Id) @ 25° C: 28A
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V
Gate Charge (Qg) @ Vgs: 25nC @ 5V
Input Capacitance (Ciss) @ Vds: 880pF @ 25V
Power - Max: 68W


Features:

· Logic-Level Gate Drive
· Ultra Low On-Resistance
· Surface Mount (IRLR2705)
· Straight Lead (IRLU2705)
· Advanced Process Technology
· Fast Switching
· Fully Avalanche Rated




Specifications

Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
28
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
20
IDM
Pulsed Drain Current
110
PD @TC = 25°C
Power Dissipation
68
W
Linear Derating Factor
0.45
W/°C
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy
110
mJ
IAR
Avalanche Current
16
A
EAR
Repetitive Avalanche Energy
6.8
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )



Description

Fifth Generation HEXFETs from International Rectifier IRLR2705 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLR2705 design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK IRLR2705 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.




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