MOSFET N-CH 55V 28A DPAK
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Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Impro...
Features: ·Logic Level Gate Drive·Ultra Low On-Resistance·Surface Mount (IRLR3410)·Straight Lead (...
Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 55V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 28A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 17A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2V @ 250µA | Gate Charge (Qg) @ Vgs: | 25nC @ 5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 880pF @ 25V | ||
Power - Max: | 68W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package: | D-Pak |
· Logic-Level Gate Drive
· Ultra Low On-Resistance
· Surface Mount (IRLR2705)
· Straight Lead (IRLU2705)
· Advanced Process Technology
· Fast Switching
· Fully Avalanche Rated
Parameter |
Max. |
Units | |
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
28 |
A |
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
20 | |
IDM |
Pulsed Drain Current |
110 | |
PD @TC = 25°C |
Power Dissipation |
68 |
W |
Linear Derating Factor |
0.45 |
W/°C | |
VGS |
Gate-to-Source Voltage |
± 16 |
V |
EAS |
Single Pulse Avalanche Energy |
110 |
mJ |
IAR |
Avalanche Current |
16 |
A |
EAR |
Repetitive Avalanche Energy |
6.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
Fifth Generation HEXFETs from International Rectifier IRLR2705 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLR2705 design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK IRLR2705 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.