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IRLR130ATM: MOSFET 100V N-Channel a-FET Logic Level

IRLR130ATM Data Sheet

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Part Number:: IRLR130ATM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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US $1.03 - 1.7 / Piece

MOSFET N-Chan 60V 2.7 Amp

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	13 A
Resistance Drain-Source RDS (on) :	0.12 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : TO-252
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.12 Ohms

Parameters:

Technical/Catalog Information	IRLR130ATM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	120 mOhm @ 6.5A, 5V
Input Capacitance (Ciss) @ Vds	755pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	24nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLR130ATM IRLR130ATM

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IRLR130ATM

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