IRLR120

MOSFET N-Chan 100V 7.7 Amp

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IRLR120 Picture
SeekIC No. : 00158565 Detail

IRLR120: MOSFET N-Chan 100V 7.7 Amp

floor Price/Ceiling Price

US $ .97~1.02 / Piece | Get Latest Price
Part Number:
IRLR120
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~2000
  • 2000~3000
  • 3000~6000
  • Unit Price
  • $1.02
  • $1
  • $.97
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 7.7 A
Resistance Drain-Source RDS (on) : 0.27 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 7.7 A
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 0.27 Ohms


Features:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRLR120/SiHLR120)
• Straight Lead (IRLU120/SiHLU120)
• Available in Tape and Reel
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Lead (Pb)-free Available



Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ± 10
Continuous Drain Current VGS at 5.0 V TC = 25 ID 7.7 A
TC = 100 4.9
Pulsed Drain Currenta IDM 31
Linear Derating Factor   0.33 W/
Linear Derating Factor (PCB Mount)e 0.020
Single Pulse Avalanche Energyb EAS 210 mJ
Repetitive Avalanche Currenta IAR 7.7 A
Repetitive Avalanche Energya EAR 4.2 mJ
Maximum Power Dissipation TC = 25 PD 42 W
Maximum Power Dissipation (PCB Mount)e TA = 25 2.5
Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
Soldering Recommendations (Peak Temperature) for 10 s   260d

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 , L = 5.3 mH, RG = 25 , IAS = 7.7 A (see fig. 12).
c. ISD 9.2 A, dI/dt 110 A/s, VDD VDS, TJ 150.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply




Description

Third generation Power MOSFETs IRLR120 from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK IRLR120 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU/SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.




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